NE32400 Datasheet, PDF (3/8 Pages) NEC – C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP

DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
50
VDS = 2 V
40
30
20
10
0
–2.0
–1.0
0
VGS – Gate to Source Voltage – V
NE32400, NE24200
MAXIMUM AVAILABLE GAIN, FORWARD
INSERTION GAIN vs. FREQUENCY
24
VDS = 2.0 V
ID = 10 mA
20
MSG.
16
|S21s|²
12
8
4
1
2
4 6 8 10
20 30 40
f – Frequency – GHz
Gain Calculations
MSG. = ^{| S21 |}
| S12 |
MAG. = ^{| S21 |} (K ± K² − 1)
| S12 |
K = ^{1 + | ∆ |2 − | S11 |2 − | S22 |2}
2 | S12 || S21 |
∆ = S11 ⋅ S22 − S21 ⋅ S12
NOISE FIGURE ASSOCIATED vs.
FREQUENCY
5
24
VDS = 2 V
ID = 10 mA
4
20
NOISE FIGURE, ASSOCIATED GAIN vs. RATIO
OF DRAIN CURRENT TO ZERO-GATE
VOLTAGE CURRENT
3
VDS = 2 V
f = 12 GHz
15
Ga
3
2
15
Ga
10
2
12
1
NF
1
8
5
NF
0
0
1
2
4 68
20 40 60 100
0
4
1
2
4 6 8 10 14 20 30
IDS/IDSS – Ratio of Drain Current to Zero-Gate Voltage Current – %
f – Frenquency – GHz
3