BB1 Datasheet, PDF (3/6 Pages) NEC – COMPOUND TRANSISTOR on-chip resistor NPN silicon epitaxial transistor For mid-speed switching

BB1A3M
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Parameter
Symbol
Conditions
Collector cutoff current
DC current gain
DC current gain
DC current gain
Low level output voltage
Low level input voltage
ICBO
h ^{Note 2}
FE1
h Note 2
FE2
h Note 2
FE3
V Note 2
OL
V Note 2
IL
VCB = 30 V, IE = 0
VCE = 2.0 V, IC = 0.1 A
VCE = 2.0 V, IC = 0.5 A
VCE = 2.0 V, IC = 0.7 A
VIN = 5.0 V, IC = 0.5 A
VCE = 5.0 V, IC = 100 µA
Input resistance
R1
E-to-B resistance
R2
Note 2 PW ≤ 350 µs, duty cycle ≤ 2 %
BB1F3P
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Parameter
Symbol
Conditions
Collector cutoff current
DC current gain
DC current gain
DC current gain
Low level output voltage
Low level input voltage
ICBO
h ^{Note 2}
FE1
h Note 2
FE2
h Note 2
FE3
V Note 2
OL
V Note 2
IL
VCB = 30 V, IE = 0
VCE = 2.0 V, IC = 0.1 A
VCE = 2.0 V, IC = 0.5 A
VCE = 2.0 V, IC = 0.7 A
VIN = 5.0 V, IC = 0.3 A
VCE = 5.0 V, IC = 100 µA
Input resistance
R1
E-to-B resistance
R2
Note 2 PW ≤ 350 µs, duty cycle ≤ 2 %
BP1J3P
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Parameter
Symbol
Conditions
Collector cutoff current
DC current gain
DC current gain
DC current gain
Low level output voltage
Low level input voltage
ICBO
h ^{Note 2}
FE1
h Note 2
FE2
h Note 2
FE3
V Note 2
OL
V Note 2
IL
VCB = 30 V, IE = 0
VCE = 2.0 V, IC = 0.1 A
VCE = 2.0 V, IC = 0.5 A
VCE = 2.0 V, IC = 0.7 A
VIN = 5.0 V, IC = 0.2 A
VCE = 5.0 V, IC = 100 µA
Input resistance
R1
E-to-B resistance
R2
Note 2 PW ≤ 350 µs, duty cycle ≤ 2 %
BB1 SERIES
MIN.
TYP.
MAX.
Unit
100
nA
80
−
100
−
135
−
0.3
0.4
V
0.3
V
0.7
1.0
1.3
kΩ
0.7
1.0
1.3
kΩ
MIN.
TYP.
MAX.
Unit
100
nA
300
−
300
−
135
−
0.3
V
0.3
V
1.54
2.2
2.86
kΩ
7
10
13
kΩ
MIN.
TYP.
MAX.
Unit
100
nA
300
600
−
300
700
−
135
600
−
0.14
0.3
V
0.3
V
2.31
3.3
4.29
kΩ
7
10
13
kΩ
Data Sheet D11739EJ2V0DS
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