3SK223 Datasheet, PDF (3/6 Pages) NEC – RF AMPLIFIER FOR CATV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD

TYPICAL CHARACTERISTICS (TA = 25 °C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
400
300
200
100
0
25
50
75
100 125
TA – Ambient Temperature – °C
DRAIN CURRENT vs.
GATE1 TO SOURCE VOLTAGE
25 _{VDS = 6 V}
VG2S = 3.5 V
3.0 V
20
2.5 V
15
2.0 V
10
1.5 V
5
1.0 V
0
0.5
1.0
1.5
2.0
2.5
VG1S – Gate1 to Source Voltage – V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
40
VDS = 6 V
f = 1 kHz
32
24
VG2S = 3.5 V
16
3.0 V
8
1.0 V
1.5 V
2.0 V _{2.5 V}
0
4
8
12
16
20
ID – Drain Current – mA
3SK223
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
25 ^{VG2S = 3 V}
20
15
VG1S = 1.8 V
1.6 V
1.4 V
10
1.2 V
1.0 V
5
0.8 V
0.6 V
0
3
6
9
12
15
VDS – Drain to Source Voltage – V
FORWARD TRANSFER ADMITTANCE vs.
GATE1 TO SOURCE VOLTAGE
40 ^{VDS = 6 V}
f = 1 kHz
32
24
VG2S = 3.5 V
16
2.5 V 3.0 V
8
2.0 V
1.5 V
1.0 V
0.5 V
0
0.5
1.0
1.5
2.0
2.5
VG1S – Gate1 to Source Voltage – V
INPUT CAPACITANCE vs.
GATE2 TO SOURCE VOLTAGE
5.0
ID = 10 mA
(at VDS = 6 V
VG2S = 3 V)
4.0 ^{f = 1 MHz}
3.0
2.0
1.0
0–1.0
0
1.0
2.0
3.0
4.0
VG2S – Gate2 to Source Voltage – V
3