2SK1109 Datasheet, PDF (3/8 Pages) NEC – N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM

TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF
POWER DISSIPATION
100
80
60
40
20
0
20 40 60 80 100 120 140 160
TA - Ambient Temperature - ˚C
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
1.0
VDS = 5 V
0.8
0.6
0.4
0.2
−0.6 −0.4 −0.2
0
+0.2
VGS - Gate to Source Voltage - V
GATE TO SOURCE CUT-OFF VOLTAGE AND FORWARD
TRANSFER ADMITTANCE vs. ZERO-GATE VOLTAGE
DRAIN CURRENT CO-RELATION
10.0
5.0
VDS = 5 V
2.0
|yfs|
1.0
0.5
0.2
0.1
0.05
VGS (off)
0.02
0.01
10
20
50 100 200 500
Zero-Gate Voltage Drain Current - µA
1000
2SK1109
GATE TO SOURCE CURRENT vs.
GATE TO SOURCE VOLTAGE
40
30
20
10
−1.0 −0.8 −0.6 −0.4 −0.2 0
0.2 0.4 0.6 0.8 1.0
−10
−20
−30
−40
VGS - Gate to Source Voltage - V
INPUT CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
100
VDS = 0 V
f = 1.0 MHz
50
20
10
5
2
1
1
2
5 10 20
50 100
VDS - Drain to Source Voltage - V
Data Sheet D15940EJ1V0DS
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