2SJ648 Datasheet, PDF (3/6 Pages) NEC – MOS FIELD EFFECT TRANSISTOR

TYPICAL CHARACTERISTICS (TA = 25°C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
240
Mounted on ceramic substrate of
200
300 mm² × 0.64 mm
160
120
80
40
0
0
25
50
75 100 125 150 175
TA - Ambient Temperature - °C
FORWARD TRANSFER CHARACTERISTICS
- 10
VDS = −10 V
Pulsed
-1
- 0.1
- 0.01
- 0.001
TA = 125°C
75°C
25°C
−25°C
- 0.0001
0
-1
-2
-3
-4
VGS - Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
10
VDS = −10 V
Pulsed
TA = −25°C
1
25°C
75°C
125°C
0.1
0.01
- 0.001
- 0.01
- 0.1
-1
- 10
ID - Drain Current - A
2SJ648
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
- 1.6
Pulsed
- 1.2
VGS = −4.5 V
−4.0 V
- 0.8
- 0.4
−2.5 V
0
0
- 1.6
- 1.4
-1
-2
-3
-4
-5
VDS - Drain to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
VDS = −10 V
ID = −1.0 mA
- 1.2
-1
- 0.8
- 0.6
- 50
0
50
100
150
Tch - Channel Temperature - °C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
4
Pulsed
3
VGS = −2.5 V, ID = −0.15 A
2
1
0
- 50
VGS = −4.0 V, ID = −0.20 A
VGS = −4.5 V, ID = −0.20 A
0
50
100
150
Tch - Channel Temperature - °C
Data Sheet D16597EJ2V0DS
3