2SJ599 Datasheet, PDF (3/4 Pages) NEC – SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

PACKAGE DRAWINGS (Unit : mm)
1) TO-251 (MP-3)
6.5±0.2
5.0±0.2
4
123
1.1±0.2
2.3±0.2
0.5±0.1
2.3 2.3
0.5-^+00..12
0.5-^+00..12
1.Gate
2.Drain
3.Source
4.Fin (Drain)
2SJ599
2) TO-252 (MP-3Z)
6.5±0.2
5.0±0.2
4
2.3±0.2
0.5±0.1
123
1.1±0.2
2.3 2.3
0.9 0.8
MAX. MAX.
0.8
1. Gate
2. Drain
3. Source
4. Fin (Drain)
EQUIVALENT CIRCUIT
Drain
Gate
Body
Diode
Gate
Protection
Diode
Source
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
Preliminary Data Sheet D14644EJ1V0DS
3