2SC5437 Datasheet, PDF (3/8 Pages) NEC – NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION

GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
8 _{VCE = 1 V}
7 ^{f = 2 GHz}
6
5
4
3
2
1
0
1
10
IC - Collector Current - mA
NOISE FIGURE vs. COLLECTOR CURRENT
4.00
3.00
VCE = 1 V
f = 2 GHz
2.00
1.00
0.00
1
10
IC - Collector Current - mA
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
1.00
2SC5437
INSERTION POWER GAIN
vs. COLLECTOR CURRENT
6
VCE = 1 V
f = 2 GHz
5
4
3
2
1
0
1
10
IC - Collector Current - mA
MAXIMUM AVAILABLE GAIN/INSERTION
POWER GAIN vs. FREQUENCY
30
VCE = 1 V
IC = 5 mA
25
20
15
10
5
0
0.1
S21e²
MAG
1.0
f - Frequency - GHz
10.0
0.10
1
10
100
VCB - Collector to Base Voltage - V
Preliminary Data Sheet
3