2SC5338 Datasheet, PDF (3/10 Pages) NEC – NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER

TYPICAL CHARACTERISTICS (T_A = 25 °C)
IC - VCE Characteristics
120
IB = 0.7 mA
0.6
100
0.5
80
0.4
60
0.3
40
0.2
20
0.1
0
2
4
6
8 10 12 14
VCE - Collector to Emitter Voltage - V
2SC5338
1000
100
10
IC - VBE Characteristics
VCE = 10 V
5V
1
0.1
0.2
0.4
0.6
0.8
1.0
1.2
VBE - Bese to Emitter Voltage - V
hFE - IC Characteristics
500
VCE = 10 V
100
5V
50
10
0.1
1
10
100
IC - Collector Current - mA
1000
IM2 - IC Characteristics
–70
VO = 105 dB µ V/75 Ω
f = 190 MHZ – 90 MHZ
–60
VCE = 10 V
–50
–40
10
5V
20
50
100
200
IC - Collector Current - mA
Cob - VCB Characteristics
5.0
f = 1.0 MHZ
3.0
2.0
1.0
0.5
0.3
1
35
10 20 30
VCB - Collector to Base Voltage - V
IM3 - IC Characteristics
–90 _{VO = 105 dB µ V/75 Ω}
f = 2 × 190MHz – 200 MHZ
–80
VCE = 10 V
–70
–60
–50
10
5V
20
50
100
200
IC - Collector Current - mA
3