2SC5193 Datasheet, PDF (3/12 Pages) NEC – MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR COMPACT MINI MOLD

TYPICAL CHARACTERISTICS (TA = 25
C)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
Free Air
200
100
0
50
100
150
Ambient Temperature TA (°C)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
30
200 µ A
180 µ A
160 µ A
20
140 µ A
120 µ A
100 µ A
10
80 µ A
60 µ A
40 µ A
IB = 20 µA
0
1
2
3
4
5
6
Collector to Emitter Voltage VCE (V)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
10
f = 2 GHz
VCE = 1 V
5
0
1
2
3
5 7 10
Collector Current IC (mA)
2SC5193
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
50
VCE = 1 V
20
10
5
2
1
0.5
0.2
0.1
0.05
0.02
0.01
0
0.5
1
Base to Emitter Voltage VBE (V)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
200
VCE = 1 V
100
0
0.1 0.2
0.5 1 2 5 10 20
Collector Current IC (mA)
50 100
INSERTION GAIN vs.
COLLECTOR CURRENT
10
f = 2 GHz
VCE = 1 V
5
0
1
2
3
5 7 10
Collector Current IC (mA)
3