UPA826TF Datasheet, PDF (2/6 Pages) NEC – NPN SILICON EPITAXIAL TWIN TRANSISTOR

UPA826TF
ABSOLUTE MAXIMUM RATINGS¹ (TA = 25°C)
SYMBOLS
PARAMETERS
UNITS RATINGS
VCBO Collector to Base Voltage
V
9
VCEO Collector to Emitter Voltage V
6
VEBO Emitter to Base Voltage
V
2
IC
Collector Current
mA
30
PT
Total Power Dissipation
1 Element
mW
150
2 Elements²
mW
200
TJ
Junction Temperature
°C
150
TSTG Storage Temperature
°C
-65 to +150
Note: 1.Operation in excess of any one of these parameters
may result in permanent damage.
2.When operating both devices, the power dissipation for
either device should not exceed 110 mW.
TYPICAL PERFORMANCE CURVES (TA = 25˚C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
Free Air
200
100
Per
2 _Elements
Element
in
Total
0
50
100
150
Ambient Temperature, TA (°C)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
60
500 µA
50
400 µA
40
300 µA
30
200 µA
20
lB=100 µA
10
0
1
2
3
4
5
6
Collector to Emitter Voltage, VCE (V)
COLLECTOR CURRENT vs.
DC BASE VOLTAGE
50
VCE = 3 V
40
30
20
10
0
0.5
1.0
DC Base Voltage, VBE (V)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
200
5V
VCE = 3 V
100
0
0.1 0.2 0.5 1 2
5 10 20 50 100
Collector Current, lc (mA)