UPA810TC Datasheet, PDF (2/12 Pages) NEC – NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD

µPA810TC
ELECTRICAL CHARACTERISTICS (TA = +25 °C)
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain Bandwidth Product
Feedback Capacitance
Insertion Power Gain
Noise Figure
Symbol
ICBO
IEBO
hFE
fT
Cre
|S21e|²
NF
Conditions
VCB = 10 V, IE = 0
VEB = 1 V, IC = 0
VCE = 3 V, IC = 7 mA^{Note 1}
VCE = 3 V, IC = 7 mA, f = 1 GHz
VCB = 3 V, IE = 0, f = 1 MHz^{Note 2}
VCE = 3 V, IC = 7 mA, f = 1 GHz
VCE = 3 V, IC = 7 mA, f = 1 GHz
MIN.
–
–
70
3.0
–
7.0
–
TYP.
–
–
–
4.5
0.7
9.0
1.2
MAX.
1.0
1.0
140
–
1.5
–
2.5
Unit
µA
µA
GHz
pF
dB
dB
Notes 1. Pulse Measurement: PW ≤ 350 µs, Duty Cycle ≤ 2 %
2. Measured with 3-pin bridge, emitter and case should be connected to guard pin of bridge.
hFE CLASSIFICATION
Rank
Marking
hFE Value
FB
75
70 to 140
2
Data Sheet P14550EJ1V0DS00