UPA508TE Datasheet, PDF (2/8 Pages) NEC – N-CHANNEL MOS FET WITH SCHOTTKY BARRIER DIODE FOR SWITCHING

MOS FET ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
20
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±12
V
Drain Current (DC)
Drain Current (pulse) ^Note1
Total Power Dissipation ^Note2
ID(DC)
±2
A
ID(pulse)
±8
A
PT
0.57
W
Channel Temperature
Tch
150
°C
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Mounted on FR-4 board of 2500 mm² x 1.6 mm, t ≤ 5 sec.
SCHOTTKY BARRIER DIODE ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Repetitive Peak Reverse Voltage
Average Forward Current ^Note1
Surge Current ^Note2
VRRM
30
V
IF(AV)
1
A
IFSM
10
A
Junction Temperature
Tj
+125
°C
Storage Temperature
Tstg −55 to +125 °C
Notes 1. Mounted on FR-4 board of 2500 mm² x 1.6 mm, t ≤ 5 sec
2. 50 Hz sine wave, 1 cycle
µ PA508TE
2
Data Sheet G16627EJ1V1DS