UPA1910 Datasheet, PDF (2/8 Pages) NEC – P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

µ PA1910
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
Zero Gate Voltage Drain Current
IDSS
VDS = –12 V, VGS = 0 V
Gate Leakage Current
IGSS
VGS = ±10 V, VDS = 0 V
Gate to Source Cut-off Voltage
VGS(off) VDS = –10 V, ID = –1 mA
Forward Transfer Admittance
| yfs | VDS = –10 V, ID = –1.5 A
Drain to Source On-state Resistance
RDS(on)1 VGS = –4.5 V, ID = –1.5 A
RDS(on)2 VGS = –4.0 V, ID = –1.5 A
RDS(on)3 VGS = –3.0 V, ID = –1.0 A
RDS(on)4 VGS = –2.5 V, ID = –1.0 A
Input Capacitance
Ciss
VDS = –10 V
Output Capacitance
Coss
VGS = 0 V
Reverse Transfer Capacitance
Crss
f = 1 MHz
Turn-on Delay Time
td(on)
VDD = –10 V
Rise Time
tr
ID = –1.5 A
Turn-off Delay Time
td(off)
VGS(on) = –4.0 V
Fall Time
tf
RG = 10 Ω
Total Gate Charge
QG
VDD = –10 V
Gate to Source Charge
QGS ID = –3.0 A
Gate to Drain Charge
QGD VGS = –4.0 V
Diode Forward Voltage
• Reverse Recovery Time
• Reverse Recovery Charge
VF(S-D)
trr
Qrr
IF = 2.5 A, VGS = 0 V
IF = 2.5 A, VGS = 0 V
di/dt = 10 A / µs
MIN. TYP. MAX. UNIT
–10 µA
±10 µA
–0.4 –0.72 –1.5 V
1 5.1
S
60 80 mΩ
63 90 mΩ
75 100 mΩ
86 130 mΩ
386
pF
283
pF
154
pF
131
ns
603
ns
427
ns
1470
ns
6.7
nC
1.6
nC
2.9
nC
0.74
V
30.0
ns
2.2
nC
• TEST CIRCUIT 1 SWITCHING TIME
• TEST CIRCUIT 2 GATE CHARGE
D.U.T.
D.U.T.
RG
RL
VGS
VGS
Wave Form
010 ^%
90 %
VGS(on)
IG = 2 mA
RL
PG.
RG = 10 Ω
VDD
PG.
50 Ω
VDD
ID
90 %
90 %
VGS
0
ID
ID
0 ^{10 %}
Wave Form
10 %
τ
td(on)
tr td(off)
tf
τ = 1µ s
Duty Cycle ≤ 1 %
ton
toff
2
Data Sheet D13105EJ2V0DS00