UPA1820 Datasheet, PDF (2/6 Pages) NEC – N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

µ PA1820
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
Zero Gate Voltage Drain Current
IDSS
VDS = 20 V, VGS = 0 V
Gate Leakage Current
IGSS
VGS = ±12 V, VDS = 0 V
Gate Cut-off Voltage
VGS(off) VDS = 10 V, ID = 1.0 mA
Forward Transfer Admittance
| yfs | VDS = 10 V, ID = 6.0 A
Drain to Source On-state Resistance
RDS(on)1 VGS = 4.5 V, ID = 6.0 A
RDS(on)2 VGS = 4.0 V, ID = 6.0 A
RDS(on)3 VGS = 2.5 V, ID = 6.0 A
Input Capacitance
Ciss
VDS = 10 V
Output Capacitance
Coss
VGS = 0 V
Reverse Transfer Capacitance
Crss f = 1.0 MHz
Turn-on Delay Time
td(on)
VDD = 10 V, ID = 6.0 A
Rise Time
tr
VGS = 4.0 V
Turn-off Delay Time
td(off)
RG = 10 Ω
Fall Time
tf
Total Gate Charge
QG
VDD = 16 V
Gate to Source Charge
QGS
VGS = 4.0 V
Gate to Drain Charge
QGD ID = 12 A
Body Diode Forward Voltage
VF(S-D) IF = 12 A, VGS = 0 V
Reverse Recovery Time
trr
IF = 12 A, VGS = 0 V
Reverse Recovery Charge
Qrr
di/dt = 100 A / µs
TEST CIRCUIT 1 SWITCHING TIME
MIN. TYP. MAX. UNIT
1.0 µA
±10 µA
0.5 1.0 1.5 V
11 21.5
S
6.8 8.6 mΩ
7.0 8.8 mΩ
8.7 12 mΩ
2020
pF
600
pF
430
pF
18
ns
56
ns
75
ns
52
ns
27
nC
2.6
nC
13
nC
0.81
V
61
ns
40
nC
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
RG
PG.
VGS
0
τ
τ = 1 µs
Duty Cycle ≤ 1%
RL
VGS
VGS
Wave Form
10%
0
VGS
90%
VDD
ID
90%
ID
ID
0 ^10%
Wave Form
90%
10%
td(on) tr td(off) tf
ton
toff
D.U.T.
IG = 2 mA
RL
PG.
50 Ω
VDD
2
Data Sheet G16274EJ1V0DS