UPA1814 Datasheet, PDF (2/8 Pages) NEC – P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

5 ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
Zero Gate Voltage Drain Current
IDSS
VDS = –30 V, VGS = 0 V
Gate Leakage Current
IGSS
VGS = ±20 V, VDS = 0 V
Gate Cut-off Voltage
VGS(off) VDS = –10 V, ID = –1 mA
Forward Transfer Admittance
| yfs | VDS = –10 V, ID = –3.5 A
Drain to Source On-state Resistance
RDS(on)1 VGS = –10 V, ID = –3.5 A
RDS(on)2 VGS = –4.5 V, ID = –3.5 A
RDS(on)3 VGS = –4.0 V, ID = –3.5 A
Input Capacitance
Ciss
VDS = –10 V
Output Capacitance
Coss
VGS = 0 V
Reverse Transfer Capacitance
Crss
f = 1 MHz
Turn-on Delay Time
td(on)
VDD = –15 V
Rise Time
tr
ID = –3.5 A
Turn-off Delay Time
td(off)
VGS(on) = –10 V
Fall Time
tf
RG = 10 Ω
Total Gate Charge
QG
VDS = –24 V
Gate to Source Charge
QGS ID = –7.0 A
Gate to Drain Charge
QGD
VGS = –10 V
Diode Forward Voltage
VF(S-D) IF = 7.0 A, VGS = 0 V
µ PA1814
MIN. TYP. MAX. UNIT
–10 µA
±10 µA
–1.0 –1.7 –2.5 V
3
14
S
12 16 mΩ
18 24 mΩ
20 27 mΩ
2180
pF
658
pF
303
pF
30
ns
140
ns
97
ns
86
ns
38
nC
5.9
nC
8.5
nC
0.79
V
TEST CIRCUIT 1 SWITCHING TIME
D.U.T.
RG
PG.
RG = 10 Ω
VGS
0
τ
τ = 1µ s
Duty Cycle ≤ 1 %
RL
VDD
VGS
VGS
Wave Form
10 %
0
VGS(on)
ID
90 %
ID
Wave Form
0 ^{10 %}
td(on)
ID
tr td(off)
90 %
90 %
10 %
tf
ton
toff
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
IG = 2 mA
RL
PG.
50 Ω
VDD
2
Data Sheet D13804EJ1V0DS00