NP86N04EHE Datasheet, PDF (2/10 Pages) NEC – MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

NP86N04EHE, NP86N04KHE, NP86N04CHE, NP86N04DHE, NP86N04MHE, NP86N04NHE
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C) ^Note1
Drain Current (Pulse) ^Note2
VGSS
ID(DC)
ID(pulse)
Total Power Dissipation (TC = 25°C)
PT
Total Power Dissipation (TA = 25°C)
PT
Channel Temperature
Tch
Storage Temperature
Tstg
Single Avalanche Current ^Note3
IAS
Single Avalanche Energy ^Note3
EAS
40
V
±20
V
±86
A
±344
A
230
W
1.8
W
175
°C
−55 to +175 °C
86/67/24
A
74/450/580 mJ
Notes 1. Calculated constant current according to MAX. allowable channel temperature.
2. PW ≤ 10 μs, Duty cycle ≤ 1%
3. Starting Tch = 25°C, VDD = 20 V, RG = 25 Ω, VGS = 20 → 0 V (see Figure 4.)
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
Rth(ch-C)
Rth(ch-A)
0.65
°C/W
83.3
°C/W
2
Data Sheet D14235EJ4V0DS