NEZ1011-3E Datasheet, PDF (2/12 Pages) NEC – N-CHANNEL GaAs MESFET

NEZ1011-3E, NEZ1414-3E
RECOMMENDED OPERATING LIMITS
Characteristics
Drain to Source Voltage
Gain Compression
Channel Temperature
Gate Resistance^Note
Symbol
VDS
Gcomp
Tch
Rg
Test Condition
MIN.
10
100
Note Rg is the series resistance between the gate supply and the FET gate.
[NEZ1011-3E]
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristics
Symbol
Test Conditions
Saturated Drain Current
IDSS
VDS = 1.5 V, VGS = 0 V
Pinch-off Voltage
Vp
VDS = 2.5 V, IDS = 10 mA
Gate to Drain Breakdown Voltage BVGD IGD = 10 mA
Thermal Resistance
Rth
Channel to Case
Linear Gain
Output Power at 1 dB Gain Comp.
Drain Current at 1 dB Gain Comp.
GL
Po (1 dB)
IDS (1 dB)
f = 10.7, 11.2, 11.7 GHz
VDS = 10 V
IDS = 0.7 A (RF OFF)
Rg = 200 Ω
Power Added Efficiency at 1 dB η add (1 dB)
Gain Compression Point
MIN.
0.7
–2.5
8.0
33.5
[NEZ1414-3E]
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristics
Symbol
Test Conditions
Saturated Drain Current
IDSS
VDS = 1.5 V, VGS = 0 V
Pinch-off Voltage
Vp
VDS = 2.5 V, IDS = 10 mA
Gate to Drain Breakdown Voltage BVGD IGD = 10 mA
Thermal Resistance
Rth
Channel to Case
Linear Gain
Output Power at 1 dB Gain Comp.
Drain Current at 1 dB Gain Comp.
Power Added Efficiency at 1 dB
Gain Compression Point
GL
Po (1 dB)
IDS (1 dB)
η add (1 dB)
f = 14.0 to 14.5 GHz
VDS = 10 V
IDS = 0.7 A (RF OFF)
Rg = 200 Ω
MIN.
0.7
–3.0
15
7.0
33.5
TYP.
10
200
TYP.
1.6
–1.3
15
5.5
8.5
34.0
0.9
30
TYP.
1.5
–1.3
18
5.5
7.5
34.0
0.9
30
MAX.
Unit
10
V
3
dB
+130
°C
200
Ω
MAX.
2.5
–0.5
7.0
1.1
Unit
A
V
V
°C/W
dB
dBm
A
%
MAX.
2.5
–0.5
7.0
1.1
Unit
A
V
V
°C/W
dB
dBm
A
%
2