NE33200N Datasheet, PDF (2/7 Pages) NEC – SUPER LOW NOISE HJ FET

NE33200
ABSOLUTE MAXIMUM RATINGS¹ (TA = 25°C)
SYMBOLS
PARAMETERS
UNITS RATINGS
VDS
Drain to Source Voltage
V
4.0
VGS
Gate to Source Voltage
V
-3.0
IDS
Drain Current
mA
IDSS
IGRF
Gate Current
µA
280
PIN
RF Input (CW)
dBm
15
TCH
Channel Temperature
°C
175
TSTG
Storage Temperature
°C -65 to +175
PT2
Total Power Dissipation
mW
240
Note:
1. Operation in excess of any one of these parameters may result in
permanent damage.
2. With chip mounted on infinite heat sink.
TYPICAL PERFORMANCE CURVES (TA = 25°C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
250
200
150
Mounted on
100
Infinite
Heat sink
50
0
0
50
100 117 150
200
250
Ambient Temperature, TA (°C)
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
50
VGS = 0 V
40
-0.1 V
30
20
-0.2 V
-0.3 V
10
-0.4 V
-0.5 V
0
0
0.5
1
1.5
2
2.5
3
Drain to Source Voltage, VDS (V)
TYPICAL NOISE PARAMETERS¹ (TA = 25°C)
VDS = 2 V, IDS = 10 mA
FREQ.
NFOPT GA
ΓOPT
(GHz)
(dB) (dB) MAG ANG Rn/50
1
0.29 21.3
0.82
8
0.39
2
0.31 18.3
0.81
17
0.36
4
0.35 15.3
0.76
41
0.33
6
0.42 13.5
0.71
63
0.30
8
0.52 12.2
0.64
77
0.27
10
0.63 11.3
0.55
95
0.24
12
0.75 10.5
0.48
112
0.22
14
0.9 9.9
0.41
130
0.19
16
1.05 9.3
0.37
144
0.18
18
1.25 8.8
0.35
164
0.15
20
1.5 8.3
0.37
180
0.13
22
1.8 7.9
0.38
-166
0.11
24
2.2 7.6
0.39
-154
0.10
26
2.6 7.3
0.40
-142
0.08
Note:
1. Noise Parameters include Bond Wires:
Gate: Total 2 wires, 1 per bond pad 0.0129" (327 µm)
long each wire.
Drain: Total 2 wires, 1 per bond pad 0.0118" (300 µm)
long each wire.
Source: Total 4 wires, 2 per side, 0.0071" (180 µm)
long each wire.
Wire: 0.0007" (17.8 µm) dia. gold.
NOISE FIGURE and GAIN
vs. DRAIN CURRENT
VDS = 2 V, f = 12 GHz
2.0
16
1.6
14
1.2
12
0.8
NF
10
GA
0.4
Tuned at each IDS
8
Tuned at 10 mA only
0
6
0
5 10 15 20 25 30 35 40
Drain Current, IDS (mA)
TRANSCONDUCTANCE vs. DRAIN CURRENT
VDS = 2.0 V
120
100
80
60
40
20
0
0
10
20
30
40
50
Drain Current, IDS (mA)