3SK176A Datasheet, PDF (2/6 Pages) NEC – RF AMP. AND MIXER FOR CATV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD

TYPICAL CHARACTERISTICS (TA = 25 °C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
400
300
200
100
0
25
50
75 100
125
TA – Ambient Temperature – °C
DRAIN CURRENT vs.
GATE1 TO SOURCE VOLTAGE
20
VDS = 6 V
5V
4V
10
3V
2V
VG2S = 1 V
0
1.0
2.0
VG1S – Gate 1 to Source Voltage – V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
40
VDS = 6 V
f = 1 kHz
3V
20
VG2S = 2 V
0
10
20
ID – Drain Current – mA
2
3SK176A
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
10
VG1S = 0.8 V
VG2S = 4 V
8
6
0.6 V
4
2
0.4 V
0.2 V
0
10
20
VDS – Drain to Source Voltage – V
FORWARD TRANSFER ADMITTANCE vs.
GATE1 TO SOURCE VOLTAGE
40
VDS = 6 V
f = 1 kHz
VG2S = 5 V
30
4V
3V
20
10
2V
1V
0
1.0
2.0
VG1S – Gate 1 to Source Voltage – V
INPUT CAPACITANCE vs.
GATE2 TO SOURCE VOLTAGE
5.0
VDS = 6 V
f = 1 MHz
4.0
3.0
ID = 10 mA at VG2S = 3 V
ID = 5 mA at VG2S = 3 V
2.0
1.0
0
–1.0
0
1.0 2.0 3.0
4.0
VG2S – Gate 2 to Source Voltage – V