2SK3991 Datasheet, PDF (2/8 Pages) NEC – SWITCHING N-CHANNEL POWER MOSFET

2SK3991
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
Zero Gate Voltage Drain Current
Gate Leakage Current
IDSS
VDS = 25 V, VGS = 0 V
IGSS
VGS = ±20 V, VDS = 0 V
Gate Cut-off Voltage
Forward Transfer Admittance ^Note
Drain to Source On-state Resistance ^Note
VGS(off)
| yfs |
RDS(on)1
VDS = 10 V, ID = 1 mA
VDS = 10 V, ID = 7.5 A
VGS = 10 V, ID = 15 A
RDS(on)2 VGS = 5.0 V, ID = 15 A
Input Capacitance
Ciss
VDS = 10 V
Output Capacitance
Coss
VGS = 0 V
Reverse Transfer Capacitance
Crss
f = 1 MHz
Turn-on Delay Time
td(on)
VDD = 12.5 V, ID = 15 A
Rise Time
tr
VGS = 10 V
Turn-off Delay Time
td(off)
RG = 10 Ω
Fall Time
tf
Total Gate Charge
QG
VDD = 20 V
Gate to Source Charge
QGS
VGS = 10 V
Gate to Drain Charge
Body Diode Forward Voltage ^Note
QGD
VF(S-D)
ID = 30 A
IF = 30 A, VGS = 0 V
Reverse Recovery Time
Reverse Recovery Charge
Note Pulsed
trr
IF = 30 A, VGS = 0 V
Qrr
di/dt = 100 A/µs
MIN.
2.0
5
TYP.
2.5
10
10.3
17.4
830
200
140
10
9
26
10
17
3
6
0.99
23
14
MAX.
10
±100
3.0
13.0
30.2
UNIT
µA
nA
V
S
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
RG = 25 Ω
L
PG.
50 Ω
VDD
VGS = 20 → 0 V
BVDSS
IAS
ID
VDD
VDS
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
RG
PG.
VGS
0
τ
τ = 1 µs
Duty Cycle ≤ 1%
RL
VDD
VGS
VGS
Wave Form
10%
0
VDS
90%
VDS
VDS
0
Wave Form
td(on)
VGS
90%
90%
10% 10%
tr td(off) tf
ton
toff
D.U.T.
IG = 2 mA
RL
PG.
50 Ω
VDD
2
Data Sheet D17434EJ2V0DS