2SJ626 Datasheet, PDF (2/8 Pages) NEC – MOS FIELD EFFECT TRANSISTOR

2SJ626
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate to Source Cut-off Voltage
IDSS
IGSS
VGS(off)
VDS = –60 V, VGS = 0 V
VGS = m20 V, VDS = 0 V
VDS = –10 V, ID = –1.0 mA
Forward Transfer Admittance
| yfs | VDS = –10 V, ID = –1.0 A
Drain to Source On-state Resistance
RDS(on)1 VGS = –10 V, ID = –1.0 A
RDS(on)2 VGS = –4.5 V, ID = –1.0 A
RDS(on)3 VGS = –4.0 V, ID = –1.0 A
Input Capacitance
Ciss
VDS = –10 V
Output Capacitance
Coss
VGS = 0 V
Reverse Transfer Capacitance
Crss f = 1.0 MHz
Turn-on Delay Time
td(on)
VDD = –30 V, ID = –1.0 A
Rise Time
tr
VGS = –10 V
Turn-off Delay Time
td(off)
RG = 10 Ω
Fall Time
tf
Total Gate Charge
QG
VDD = –48 V
Gate to Source Charge
QGS
VGS = –10 V
Gate to Drain Charge
QGD ID = –1.5 A
Body Diode Forward Voltage
VF(S-D) IF = 1.5 A, VGS = 0 V
MIN. TYP. MAX. UNIT
–1.0 µA
m10 µA
–1.5 –2.1 –2.5 V
1.0 2.5
S
310 388 mΩ
385 514 mΩ
417 556 mΩ
255
pF
45
pF
17
pF
17
ns
29
ns
92
ns
65
ns
8.2
nC
1.3
nC
2.2
nC
0.86
V
TEST CIRCUIT 1 SWITCHING TIME
D.U.T.
RG
PG.
VGS (−)
0
τ
τ = 1µs
Duty Cycle ≤ 1%
RL
VDD
VGS(−)
VGS
Wave Form
10%
0
VGS
90%
VDS(−)
90%
VDS
VDS
0
Wave Form
td(on)
10% 10%
tr td(off)
90%
tf
ton
toff
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
IG = −2 mA
RL
PG.
50 Ω
VDD
2
Data Sheet D15962EJ1V0DS