2SJ353 Datasheet, PDF (2/6 Pages) NEC – P-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING

ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
PARAMETER
SYMBOL
Drain Cut-Off Current
IDSS
Gate Leakage Current
IGSS
Gate Cut-Off Voltage
VGS(off)
Forward Transfer Admittance
|yfs|
Drain to Source On-State Resistance RDS(on)1
Drain to Source On-State Resistance RDS(on)2
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
TEST CONDITIONS
VDS = –60 V, VGS = 0
VGS = –16/+10 V, VDS = 0
VDS = –10 V, ID = –1 mA
VDS = –10 V, ID = –1.0 A
VGS = –4 V, ID = –0.8 A
VGS = –10 V, ID = –1.0 A
VDS = –10 V, VGS = 0,
f = 1.0 MHz
VDD = –30 V, ID = –1.0 A
VGS(on) = –10 V,
RG = 10 Ω, RL = 30 Ω
2SJ353
MIN.
–1.0
1.0
TYP.
–1.6
0.58
0.33
320
200
70
5
15
40
20
MAX.
–10
±10
–2.0
0.68
0.37
UNIT
µA
µA
V
S
Ω
Ω
pF
pF
pF
ns
ns
ns
ns
2