2SC4186 Datasheet, PDF (2/8 Pages) NEC – UHF OSCILLATOR AND UHF MIXER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD

TYPICAL CHARACTERISTICS (TA = 25 ˚C)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
200
VCE = 10 V
100
50
20
10
5
0.05 0.1 0.2 0.5 1 2 5 10 20 40
IC - Collector Current - mA
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
7
VCE = 10 V
5
2
1
0.5
0.2
0.1
0.5 1 2
5 10 20 40
IC - Collector Current - mA
OUTPUT CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
f = 1.0 MHz
3
2
1
0.5
1
2
5 10 20
VCB - Collector to Base Voltage - V
2SC4186
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
70
50
VCE = 10 V
20
10
5
2
1
0.5
0.6
0.7
0.8
0.9
VBE - Base to Emitter Voltage - V
INSERTION GAIN vs.
COLLECTOR CURRENT
15
VCE = 10 V
f = 1.0 GHz
10
5
0
0.5 1 2
5 10 20 40
IC - Collector Current - mA
CC · rb’b vs.
COLLECTOR CURRENT
VCE = 10 V
10
IE = –5.0 mA
f = 39.1 MHz
8
6
4
2
0 0.5 1
2
5
10
20 50
IC - Collector Current - mA
2