2SC3809 Datasheet, PDF (2/4 Pages) NEC – NPN SILICON EPITAXIAL TRANSISTOR FOR MICROWAVE AMPLIFIERS AND ULTRA HIGH SPEED SWITCHINGS INDUSTRIAL USE

2SC3809
REGARDING CLEANSING
Cleanse the flux after soldering. Particularly, cleanse the bottom surface of the transistor so that flux does not remain.
If any flux remains on the bottom surface, it may absorb moisture, resulting in short circuit among pins due to metal-migration
at the metalized area of the transistor. You can use alcohol as a solvent.
Do not apply ultra-sonic-cleaning on this product.
TYPICAL CHARACTERISTICS (TA = 25 °C)
FEEDBACK CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
2
f = 1.0 MHz
1
DC CURRENT GAIN vs.
COLLECTOR CURRENT
200
VCE = 10 V
100
50
0.5
0.3
0
0.5 1 2
5 10
20 30
VCB - Collector to Base Voltage - V
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
10
5.0
3.0
2.0
1.0
0.5
0.3
0.2
VCE = 10 V
0.1
0 0.5 1.0
5.0 10 30
IC - Collector Current - mA
20
10
0.5 1
5
10
50
IC - Collector Current - mA
2