2SA1648 Datasheet, PDF (2/5 Pages) NEC – PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING

2SA1648,1648-Z
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Parameter
Symbol
Conditions
Collector to emitter voltage
VCEO(SUS)
IC = −3.0 A, IB = −0.3 A, L = 1 mH
Collector to emitter voltage
VCEX(SUS)
IC = −3.0 A, IB2 = −IB1 = −0.3 A,
VBE(OFF) = 1.5 V, L = 180 µH, clamped
Collector cutoff current
ICBO
VCE = −60 V, IE = 0 A
Collector cutoff current
ICER
VCE = −60 V, RBE = 50 Ω, TA = 125°C
Collector cutoff current
ICEX1
VCE = −60 V, VBE(OFF) = 1.5 V
Collector cutoff current
ICEX2
VCE = −60 V, VBE(OFF) = 1.5 V,
TA = 125°C
Emitter cutoff current
DC current gain
DC current gain
DC current gain
Collector saturation voltage
Collector saturation voltage
Base saturation voltage
Base saturation voltage
IEBO
h ^Note
FE1
h Note
FE2
h Note
FE3
V Note
CE(sat)1
V Note
CE(sat)2
V Note
BE(sat)1
V Note
BE(sat)2
VEB = −5.0 V, IC = 0 A
VCE = −2.0 V, IC = −0.5 A
VCE = −2.0 V, IC = −1.0 A
VCE = −2.0 V, IC = −3.0 A
IC = −3.0 A, IB = −0.15 A
IC = −4.0 A, IB = −0.2 A
IC = −3.0 A, IB = −0.15 A
IC = −4.0 A, IB = −0.2 A
Collector capacitance
Cob
VCB = −10 V, IE = 0 A, f = 1.0 MHz
Gain bandwidth product
fT
VCE = −10 V, IC = 0.5 A
Turn-on time
Storage time
Fall time
ton
IC = −3.0 A, RL = 17 Ω,
tstg
IB1 = −IB2 = −0.15 A, VCC ≅ −50 V
Refer to SWITCHING TIME TEST
tf
CIRCUIT.
Note Pulse test PW ≤ 350 µs, Duty Cycle ≤ 2%/Pulsed
hFE CLASSIFICATION
Marking
hFE2
M
100 to 200
L
150 to 300
K
200 to 400
MIN.
−60
−60
100
100
60
TYP.
MAX.
−10
−1.0
−10
−1.0
−10
200
400
−0.3
−0.5
−1.2
−1.5
80
90
0.3
1.5
0.3
Unit
V
V
µA
mA
µA
mA
µA
V
V
V
V
pF
MHz
µs
µs
µs
SWITCHING TIME TEST CIRCUIT
Base current
waveform
Collector current
waveform
2
Data Sheet D16121EJ3V0DS