UPG2156TB Datasheet, PDF (1/8 Pages) NEC – L-BAND 4 W SINGLE CONTROL HIGH POWER SPDT SWITCH

DATA SHEET
GaAs INTEGRATED CIRCUIT
µPG2156TB
L-BAND 4 W SINGLE CONTROL HIGH POWER SPDT SWITCH
DESCRIPTION
The µPG2156TB is an L-band single control SPDT GaAs FET switch which was developed for digital cellular or
cordless telephone application. The device can operate from 800 MHz to 2.5 GHz, having the low insertion loss and
high linearity.
FEATURES
• Low insertion loss
: LINS = 0.45 dB TYP. @ Vcont = +2.6 V/0 V, f = 1.0 GHz, IN-OUT1
: LINS = 0.35 dB TYP. @ Vcont = +2.6 V/0 V, f = 1.0 GHz, IN-OUT2
: LINS = 0.45 dB TYP. @ Vcont = +2.6 V/0 V, f = 2.0 GHz, IN-OUT1/2
• High power switching
: Pin (0.1 dB) = 37 dBm TYP. @ Vcont = +2.6 V/0 V, f = 1.0 GHz, IN-OUT1/2
• 6-pin super minimold package (2.1 × 2.0 × 0.9 mm)
APPLICATION
• GSM Triple/Quad band digital cellular
ORDERING INFORMATION
Part Number
µPG2156TB-E4
Order Number
Package
µPG2156TB-E4-A 6-pin super minimold
(Pb-Free)
Marking
Supplying Form
G4V
• Embossed tape 8 mm wide
• Pin 4, 5, 6 face the perforation side of the tape
• Qty 3 kpcs/reel
Remark To order evaluation samples, contact your nearby sales office.
Part number for sample order: µPG2156TB
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PG10588EJ01V0DS (1st edition)
Date Published December 2005 CP(K)
Printed in Japan
 NEC Compound Semiconductor Devices, Ltd. 2005