UPG153TB Datasheet, PDF (1/8 Pages) NEC – L-BAND SPDT SWITCH

DATA SHEET
GaAs INTEGRATED CIRCUIT
µPG153TB
L-BAND SPDT SWITCH
DESCRIPTION
The µPG153TB is an L-band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital
cellular or cordless telephone application. The device can operate from 100 MHz to 2.5 GHz, having the low
insertion loss. It housed in an original 6-pin super minimold package that is smaller than usual 6-pin minimold easy
to install and contributes to miniaturizing the system.
FEATURES
• Low Insertion Loss : LINS = 0.7 dB TYP. @VCONT = +3.0 V/0 V, f = 2 GHz
• High Linearity Switching: Pin (1 dB) = +33.0 dBm TYP. @VCONT = +3.0 V/0 V, f = 2 GHz
• Small 6-pin super minimold package (Size: 2.0 × 1.25 × 0.9 mm)
APPLICATIONS
• L, S-band digital cellular or cordless telephone
• PCS, WLAN, and WLL applications
ORDERING INFORMATION
Part Number
µPG153TB-E3
Marking
G1J
Package
6-pin super minimold
Supplying Form
Embossed tape 8 mm wide.
Pin 1, 2, 3 face to tape perforation side.
Qty 3 kp/reel.
Remark To order evaluation samples, please contact your local NEC sales office. (Part number for sample
order: µPG153TB)
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Parameter
Control Voltage 1, 2
Input Power
Total Power Dissipation
Operating Temperature
Storage Temperature
Symbol
VCONT1, 2
Pin
Ptot
TA
Tstg
Ratings
–6.0 to +6.0^Note
+33
0.15
–45 to +85
–55 to +150
Unit
V
dBm
W
°C
°C
Note Condition 2.5 ≤ | VCONT1 – VCONT2 | ≤ 6.0 V
Remarks 1. Mounted on a 50 × 50 × 1.6 mm double copper clad epoxy glass PWB, TA = +85°C
2. Operation in excess of any one of these parameters may result in permanent damage.
Caution The IC must be handled with care to prevent static discharge because its circuit is composed of
GaAs MES FET.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P13632EJ2V0DS00 (2nd edition)
Date Published September 1999 N CP(K)
Printed in Japan
The mark shows major revised points.
©
1998, 1999