UPD4664312-X Datasheet, PDF (1/36 Pages) NEC – 64M-BIT CMOS MOBILE SPECIFIED RAM 4M-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION

PRELIMINARY DATA SHEET
MOS INTEGRATED CIRCUIT
µPD4664312-X
64M-BIT CMOS MOBILE SPECIFIED RAM
4M-WORD BY 16-BIT
EXTENDED TEMPERATURE OPERATION
Description
The µPD4664312-X is a high speed, low power, 67,108,864 bits (4,194,304 words by 16 bits) CMOS Mobile
Specified RAM featuring Low Power Static RAM compatible function and pin configuration.
The µPD4664312-X is fabricated with advanced CMOS technology using one-transistor memory cell.
The µPD4664312-X is packed in 93-pin TAPE FBGA.
Features
• 4,194,304 words by 16 bits organization
• Fast access time: 65, 75 ns (MAX.)
• Fast page access time: 18, 25 ns (MAX.)
• Byte data control: /LB (I/O0 to I/O7), /UB (I/O8 to I/O15)
• Low voltage operation: 2.7 to 3.1 V (-B65X)
2.7 to 3.1 V (Chip), 1.65 to 2.1 V (I/O) (-BE75X)
• Operating ambient temperature: TA = –25 to +85 °C
• Output Enable input for easy application
• Chip Enable input: /CS pin
• Standby Mode input: MODE pin
• Standby Mode1: Normal standby (Memory cell data hold valid)
• Standby Mode2: Density of memory cell data hold is variable
µPD4664312
Access
time
ns (MAX.)
Operating supply
voltage
V
Operating
ambient At operating
temperature mA (MAX.)
Supply current
At standby µA (MAX.)
Density of data hold
Chip
I/O
°C
64M bits 16M bits 8M bits 4M bits 0M bit
-B65X
-BE75X ^Note
65
2.7 to 3.1
–
–25 to +85
45
100
60
50
45
10
75
2.7 to 3.1 1.65 to 2.1
40
Note Under development
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. M15867EJ5V0DS00 (5th edition)
Date Published August 2002 NS CP (K)
Printed in Japan
The mark  shows major revised points.
©
2001