UPD4632312A-X Datasheet, PDF (1/36 Pages) NEC – 32M-BIT CMOS MOBILE SPECIFIED RAM 2M-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION

PRELIMINARY DATA SHEET
MOS INTEGRATED CIRCUIT
µPD4632312A-X
32M-BIT CMOS MOBILE SPECIFIED RAM
2M-WORD BY 16-BIT
EXTENDED TEMPERATURE OPERATION
Description
The µPD4632312A-X is a high speed, low power, 33,554,432 bits (2,097,152 words by 16 bits) CMOS Mobile
Specified RAM featuring Low Power Static RAM compatible function and pin configuration.
The µPD4632312A-X is fabricated with advanced CMOS technology using one-transistor memory cell.
The µPD4632312A-X is packed in 48-pin TAPE FBGA.
Features
• 2,097,152 words by 16 bits organization
• Fast access time: 60, 65, 75, 85 ns (MAX.)
• Fast page access time: 18, 25, 30 ns (MAX.)
• Byte data control: /LB (I/O0 to I/O7), /UB (I/O8 to I/O15)
• Low voltage operation: 2.7 to 3.1 V (-B60X, -B65X)
2.7 to 3.1 V (Chip), 1.65 to 2.1 V (I/O) (-BE75X, -BE85X)
• Operating ambient temperature: TA = –25 to +85 °C
• Output Enable input for easy application
• Chip Enable input: /CS pin
• Standby Mode input: MODE pin
• Standby Mode1: Normal standby (Memory cell data hold valid)
• Standby Mode2: Density of memory cell data hold is variable
µPD4632312A
-B60X ^Note, -B65X
-BE75X ^Note, -BE85X ^Note
Access Operating supply Operating
Supply current
time
voltage
ambient At operating
At standby µA (MAX.)
ns (MAX.)
V
temperature mA (MAX.)
Density of data hold
Chip
I/O
°C
32M bits 16M bits 8M bits 4M bits 0M bit
60, 65 2.7 to 3.1
–
–25 to +85
50
100
70
60
50
30
75, 85 2.7 to 3.1 1.65 to 2.1
45
Note Under development
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with NEC Electronics sales
representative for availability and additional information.
Document No. M15874EJ5V0DS00 (5th edition)
Date Published January 2003 NS CP (K)
Printed in Japan
The mark # shows major revised points.
2001