UPD4616112-X Datasheet, PDF (1/32 Pages) NEC – 16M-BIT CMOS MOBILE SPECIFIED RAM 1M-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION

DATA SHEET
MOS INTEGRATED CIRCUIT
µPD4616112-X
16M-BIT CMOS MOBILE SPECIFIED RAM
1M-WORD BY 16-BIT
EXTENDED TEMPERATURE OPERATION
Description
The µPD4616112-X is a high speed, low power, 16,777,216 bits (1,048,576 words by 16 bits) CMOS mobile
specified RAM featuring low power static RAM compatible function and pin configuration.
The µPD4616112-X is fabricated with advanced CMOS technology using one-transistor memory cell.
The µPD4616112-X is packed in 48-pin TAPE FBGA.
Features
• 1,048,576 words by 16 bits organization
• Fast access time: 85, 95 ns (MAX.)
• Byte data control: /LB (I/O0 - I/O7), /UB (I/O8 - I/O15)
• Low voltage operation: VCC = 2.6 to 3.1 V
• Operating ambient temperature: TA = –25 to +85 °C
• Output Enable input for easy application
• Chip Enable input: /CS pin
• Standby Mode input: MODE pin
• Standby Mode1: Normal standby (Memory cell data hold valid)
• Standby Mode2: Memory cell data hold invalid
Product name
µPD4616112-BxxLX
Access time
ns (MAX.)
85, 95
Operating supply Operating ambient
Voltage
temperature
°C
2.6 to 3.1
–25 to +85
Supply current
At operating
mA (MAX.)
At standby
µA (MAX.)
35
70 / 10
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confirm that this is the latest version.
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availability and additional information.
Document No. M15794EJ2V0DS00 (2nd edition)
Date Published January 2002 NS CP (K)
Printed in Japan
The mark 5 shows major revised points.
©
2001