UPD46128512-X Datasheet, PDF (1/82 Pages) NEC – 128M-BIT CMOS MOBILE SPECIFIED RAM 8M-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION

PRELIMINARY DATA SHEET
MOS INTEGRATED CIRCUIT
μPD46128512-X
128M-BIT CMOS MOBILE SPECIFIED RAM
8M-WORD BY 16-BIT
EXTENDED TEMPERATURE OPERATION
Description
The μPD46128512-X is a high speed, low power, 134,217,728 bits (8,388,608 words by 16 bits) CMOS Mobile
Specified RAM featuring asynchronous page read and random write, synchronous burst read/write function.
The μPD46128512-X is fabricated with advanced CMOS technology using one-transistor memory cell.
Features
• 8,388,608 words by 16 bits organization
• Asynchronous page read mode
• Synchronous read and write mode
• Burst length: 8 words / 16 words / continuous
• Clock latency: 5, 6, 7, 8, 9, 10
• Burst sequence: Linear burst
• Max clock frequency: 108/83 MHz
• Byte data control: /LB (DQ0 to DQ7), /UB (DQ8 to DQ15)
• Low voltage operation: 1.7 to 2.0 V
• Operating ambient temperature: TA = −30 to +85 °C
• Chip Enable input: /CE1 pin
• Standby Mode input: CE2 pin
• Standby Mode 1: Normal standby (Memory cell data hold valid)
• Standby Mode 2: Density of memory cell data hold is variable
μPD46128512 Clock Asynchronous Operating Operating
frequency initial access supply ambient ^{At operating}
MHz
time
voltage temperature
mA
(MAX.)
ns
V
°C
(MAX.)
Supply current
At standby μA
(MAX.)
(TYP.)
Density of data hold
Density of data hold
(MAX.)
128M 32M 16M 8M 0M 128M 32M 16M 8M 0M
-E9X ^Note
108
-E10X ^Note
-E11X
83
-E12X
bits bits bits bits bits bits bits bits bits bits
70
1.7 to 2.0 −30 to +85
60
250 T.B.D. T.B.D. T.B.D. 65 80 T.B.D. T.B.D. T.B.D. 15
85
50
70
60
85
50
Note Under consideration
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. M17507EJ2V0DS00 (2nd edition)
Date Published September 2005 CP (K)
Printed in Japan
The mark shows major revised points.
2005