UPD448012-X Datasheet, PDF (1/24 Pages) NEC – 8M-BIT CMOS STATIC RAM 512K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION

DATA SHEET
MOS INTEGRATED CIRCUIT
µ PD448012-X
8M-BIT CMOS STATIC RAM
512K-WORD BY 16-BIT
EXTENDED TEMPERATURE OPERATION
Description
The µPD448012-X is a high speed, low power, 8,388,608 bits (524,288 words by 16 bits) CMOS static RAM.
The µPD448012-X has two chip enable pins (/CE1, CE2) to extend the capacity.
The µPD448012-X is packed in 48-pin PLASTIC TSOP (I) (Normal bent).
Features
• 524,288 words by 16 bits organization
 • Fast access time: 55, 70, 85, 100, 120 ns (MAX.)
• Byte data control: /LB (I/O1 - I/O8), /UB (I/O9 - I/O16)
 • Low voltage operation
(B version: VCC = 2.7 to 3.6 V, C version: VCC = 2.2 to 3.6 V)
• Low VCC data retention : 1.0 V (MIN.)
• Operating ambient temperature: TA = –25 to +85°C
• Output Enable input for easy application
• Two Chip Enable inputs: /CE1, CE2
Part number
Access time Operating supply Operating ambient
ns (MAX.)
voltage
temperature
At operating
 µPD448012-BxxX
 µPD448012-CxxX
55, 70, 85, 100
70, 85, 100, 120
V
2.7 to 3.6
2.2 to 3.6
°C
−25 to +85
mA (MAX.)
45 ^Note
45
 Note Cycle time ≥ 70 ns, µPD448012-B55X : 50 mA
Supply current
At standby
µA (MAX.)
At data retention
µA (MAX.)
15
6
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
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availability and additional information.
Document No. M14466EJ5V0DS00 (5th edition)
Date Published July 2001 NS CP (K)
The mark 5 shows major revised points.
Printed in Japan
©
1999