UPD444016L-Y Datasheet, PDF (1/16 Pages) NEC – 4M-BIT CMOS FAST SRAM 256K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION

PRELIMINARY DATA SHEET
MOS INTEGRATED CIRCUIT
µPD444016L-Y
4M-BIT CMOS FAST SRAM
256K-WORD BY 16-BIT
EXTENDED TEMPERATURE OPERATION
Description
The µPD444016L-Y is a high speed, low power, 4,194,304 bits (262,144 words by 16 bits) CMOS static RAM.
Operating supply voltage is 3.3 V ± 0.3 V.
The µPD444016L-Y is packaged in 44-PIN PLASTIC TSOP (II).
Features
• 262,144 words by 16 bits organization
• Fast access time : 8, 10, 12 ns (MAX.)
• Byte data control : /LB (I/O1 - I/O8), /UB (I/O9 - I/O16)
• Output Enable input for easy application
• Single +3.3 V power supply
Ordering Information
Part number
Package
µPD444016LG5-A8Y-7JF
µPD444016LG5-A10Y-7JF
µPD444016LG5-A12Y-7JF
44-PIN PLASTIC TSOP (II)
(10.16 mm (400))
(Normal bent)
Access time
ns (MAX.)
8
10
12
Supply current mA (MAX.)
At operating
At standby
210
5
190
180
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. M15392EJ1V0DS00 (1st edition)
Date Published February 2001 NS CP(K)
Printed in Japan
©
2001