UPD444016-Y Datasheet, PDF (1/16 Pages) NEC – 4M-BIT CMOS FAST SRAM 256K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION

PRELIMINARY DATA SHEET
MOS INTEGRATED CIRCUIT
µPD444016-Y
4M-BIT CMOS FAST SRAM
256K-WORD BY 16-BIT
EXTENDED TEMPERATURE OPERATION
Description
The µPD444016-Y is a high speed, low power, 4,194,304 bits (262,144 words by 16 bits) CMOS static RAM.
Operating supply voltage is 5.0 V ± 0.5 V.
The µPD444016-Y is packaged in 44-PIN PLASTIC TSOP (II).
Features
• 262,144 words by 16 bits organization
• Fast access time : 8, 10, 12 ns (MAX.)
• Byte data control : /LB (I/O1 - I/O8), /UB (I/O9 - I/O16)
• Output Enable input for easy application
• Single +5.0 V power supply
Ordering Information
Part number
Package
µPD444016G5-8Y-7JF
µPD444016G5-10Y-7JF
µPD444016G5-12Y-7JF
44-PIN PLASTIC TSOP (II)
(10.16 mm (400))
(Normal bent)
Access time
ns (MAX.)
8
10
12
Supply current mA (MAX.)
At operating
At standby
220
10
200
190
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. M15391EJ1V0DS00 (1st edition)
Date Published February 2001 NS CP(K)
Printed in Japan
©
2001