UPD444012A-X Datasheet, PDF (1/24 Pages) NEC – 4M-BIT CMOS STATIC RAM 256K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION

DATA SHEET
MOS INTEGRATED CIRCUIT
µPD444012A-X
4M-BIT CMOS STATIC RAM
256K-WORD BY 16-BIT
EXTENDED TEMPERATURE OPERATION
Description
The µPD444012A-X is a high speed, low power, 4,194,304 bits (262,144 words by 16 bits) CMOS static RAM.
The µPD444012A-X has two chip enable pins (/CE1, CE2) to extend the capacity.
The µPD444012A-X is packed in 48-pin PLASTIC TSOP (I) (Normal bent).
Features
• 262,144 words by 16 bits organization
5 • Fast access time: 50, 55, 70, 85, 100, 120 ns (MAX.)
• Byte data control: /LB (I/O1 - I/O8), /UB (I/O9 - I/O16)
5 • Low voltage operation
(B version: VCC = 2.7 to 3.6 V, C version: VCC = 2.2 to 3.6 V)
• Low VCC data retention: 1.0 V (MIN.)
• Operating ambient temperature: TA = –25 to +85°C
• Output Enable input for easy application
• Two Chip Enable inputs: /CE1, CE2
Part number
Access time
Operating supply Operating ambient
Supply current
ns (MAX.)
Voltage
temperature At operating At standby At data retention
5
µPD444012A-BxxX 50 ^{Note 1}, 55, 70, 85, 100
V
2.7 to 3.6
°C
−25 to +85
mA (MAX.)
40 ^{Note 2}
45 ^{Note 3}
50 ^{Note 4}
µA (MAX.)
7
µA (MAX.)
3
µPD444012A-CxxX
70, 85, 100, 120
2.2 to 3.6
40
5 Notes 1. VCC ≥ 3.0 V
5
2. Cycle time ≥ 70 ns
5
3. Cycle time = 55 ns
5
4. Cycle time = 50 ns
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. M14464EJ5V0DS00 (5th edition)
Date Published July 2001 NS CP (K)
The mark 5 shows major revised points.
Printed in Japan
©
1999