UPD444004L Datasheet, PDF (1/16 Pages) NEC – 4M-BIT CMOS FAST SRAM 1M-WORD BY 4-BIT

DATA SHEET
MOS INTEGRATED CIRCUIT
µPD444004L
4M-BIT CMOS FAST SRAM
1M-WORD BY 4-BIT
Description
The µPD444004L is a high speed, low power, 4,194,304 bits (1,048,576 words by 4 bits) CMOS static RAM.
Operating supply voltage is 3.3 V ± 0.3 V.
The µPD444004L is packaged in a 32-pin PLASTIC SOJ.
Features
• 1,048,576 words by 4 bits organization
• Fast access time : 8, 10, 12 ns (MAX.)
• Output Enable input for easy application
• Single +3.3 V power supply
Ordering Information
Part number
µPD444004LLE-A8
µPD444004LLE-A10
µPD444004LLE-A12
Package
32-pin PLASTIC SOJ
(10.16 mm (400))
Access time
ns (MAX.)
8
10
12
Supply current mA (MAX.)
At operating
At standby
180
5
160
150
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. M14427EJ4V0DS00 (4th edition)
The mark  shows major revised points.
Date Published May 2002 NS CP(K)
Printed in Japan
©
1999