UPD444004 Datasheet, PDF (1/16 Pages) NEC – 4M-BIT CMOS FAST SRAM 1M-WORD BY 4-BIT

DATA SHEET
MOS INTEGRATED CIRCUIT
µPD444004
4M-BIT CMOS FAST SRAM
1M-WORD BY 4-BIT
Description
The µPD444004 is a high speed, low power, 4,194,304 bits (1,048,576 words by 4 bits) CMOS static RAM.
Operating supply voltage is 5.0 V ± 0.5 V.
The µPD444004 is packaged in a 32-pin PLASTIC SOJ.
Features
• 1,048,576 words by 4 bits organization
• Fast access time : 8, 10, 12 ns (MAX.)
• Output Enable input for easy application
• Single +5.0 V power supply
Ordering Information
Part number
µPD444004LE-8
µPD444004LE-10
µPD444004LE-12
Package
32-pin PLASTIC SOJ
(10.16 mm (400))
Access time
ns (MAX.)
8
10
12
Supply current mA (MAX.)
At operating
At standby
190
10
170
160
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. M14426EJ4V0DS00 (4th edition)
The mark  shows major revised points.
Date Published May 2002 NS CP(K)
Printed in Japan
©
1999