UPD4416016 Datasheet, PDF (1/12 Pages) NEC – 16M-BIT CMOS FAST SRAM 1M-WORD BY 16-BIT

DATA SHEET
MOS INTEGRATED CIRCUIT
µPD4416016
16M-BIT CMOS FAST SRAM
1M-WORD BY 16-BIT
Description
The µPD4416016 is a high speed, low power, 16,777,216 bits (1,048,576 words by 16 bits) CMOS static RAM.
Operating supply voltage is 3.3 V ± 0.3 V.
The µPD4416016 is packaged in a 54-pin plastic TSOP (II).
Features
• 1,048,576 words by 16 bits organization
• Fast access time : 15, 17 ns (MAX.)
• Byte data control : /LB (I/O1 - I/O8), /UB (I/O9 - I/O16)
• Output Enable input for easy application
Ordering Information
Part number
Package
• _{µPD4416016G5-A15-9JF 54-PIN PLASTIC TSOP (II)}
µPD4416016G5-A17-9JF
(10.16 mm (400))
Supply voltage
V
3.3 ± 0.3
Access time
ns (MAX.)
15
17
Supply current mA (MAX.)
At operating
At standby
250
10
240
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. M14081EJ5V0DS00 (5th edition)
The mark • shows major revised points.
Date Published December 2000 NS CP(K)
Printed in Japan
©
1999