UPD441000L-X Datasheet, PDF (1/28 Pages) NEC – 1M-BIT CMOS STATIC RAM 128K-WORD BY 8-BIT EXTENDED TEMPERATURE OPERATION

DATA SHEET
MOS INTEGRATED CIRCUIT
µPD441000L-X
1M-BIT CMOS STATIC RAM
128K-WORD BY 8-BIT
EXTENDED TEMPERATURE OPERATION
Description
The µPD441000L-X is a high speed, low power, 1,048,576 bits (131,072 words by 8 bits) CMOS static RAM.
The µPD441000L-X has two chip enable pins (/CE1, CE2) to extend the capacity.
5
The µPD441000L-X is packed in 32-pin plastic SOP and 32-pin plastic TSOP (I) (8×13.4 mm) and (8×20 mm).
Features
• 131,072 words by 8 bits organization
• Fast access time : 70, 85, 100, 120, 150 ns (MAX.)
• Low voltage operation
(B version : VCC = 2.7 to 3.6 V, C version : VCC = 2.2 to 3.6 V, D version : VCC = 1.8 to 3.6 V)
• Low VCC data retention
(B version : 2.0 V (MIN.), C version, D version : 1.5 V (MIN.))
• Operating ambient temperature : TA = –25 to +85 °C
• Output Enable input for easy application
• Two Chip Enable inputs : /CE1, CE2
Part number
µPD441000L-BxxX
µPD441000L-CxxX
µPD441000L-DxxX
Access time Operating supply Operating ambient
ns (MAX.)
voltage
temperature
V
°C
70, 85, 100
2.7 to 3.6
−25 to +85
100, 120
2.2 to 3.6
120, 150
1.8 to 3.6
At operating
mA (MAX.)
25
Supply current
At standby At data retention
µA (MAX.)
µA (MAX.)
2
2 ^Note
Note 0.5 µA (TA ≤ 40 °C)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. M13714EJ5V0DSJ1 (5th edition)
The mark • shows major revised points.
Date Published December 2000 NS CP (K)
©
Printed in Japan
1998