UPD43257B_06 Datasheet, PDF (1/24 Pages) NEC – MOS INTEGRATED CIRCUIT 256K-BIT CMOS STATIC RAM 32K-WORD BY 8-BIT

DATA SHEET
MOS INTEGRATED CIRCUIT
μPD43257B
256K-BIT CMOS STATIC RAM
32K-WORD BY 8-BIT
Description
The μPD43257B is a high speed, low power, and 262,144 bits (32,768 words by 8 bits) CMOS static RAM.
Battery backup is available. And the μPD43257B has two chip enable pins (/CE1, CE2) to extend the capacity.
The μPD43257B is packed in 28-pin PLASTIC DIP and 28-pin PLASTIC SOP.
Features
• 32,768 words by 8 bits organization
• Fast access time: 70, 85 ns (MAX.)
• Low VCC data retention: 2.0 V (MIN.)
• Two Chip Enable inputs: /CE1, CE2
Part number
μPD43257B-xxL
μPD43257B-xxLL
Access time
ns (MAX.)
70, 85
Operating supply Operating ambient
voltage
temperature
At operating
V
°C
mA (MAX.)
4.5 to 5.5
0 to 70
45
45
Note TA ≤ 40 °C, VCC = 3.0 V
Supply current
At standby
μA (MAX.)
At data retention
μA (MAX.) ^Note
50
3
15
2
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confirm that this is the latest version.
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Document No. M10693EJ9V0DS00 (9th edition)
Date Published June 2006 NS CP (K)
Printed in Japan
1992