UPD431000A Datasheet, PDF (1/32 Pages) NEC – 1M-BIT CMOS STATIC RAM 128K-WORD BY 8-BIT

DATA SHEET
MOS INTEGRATED CIRCUIT
µ PD431000A
1M-BIT CMOS STATIC RAM
128K-WORD BY 8-BIT
Description
The µPD431000A is a high speed, low power, and 1,048,576 bits (131,072 words by 8 bits) CMOS static RAM.
The µPD431000A has two chip enable pins (/CE1, CE2) to extend the capacity. And battery backup is available. In
addition to this, A and B versions are low voltage operations.
The µPD431000A is packed in 32-pin PLASTIC DIP, 32-pin PLASTIC SOP and 32-pin PLASTIC TSOP (I) (8 × 13.4
mm) and (8 × 20 mm).
Features
• 131,072 words by 8 bits organization
• Fast access time: 70, 85, 100, 120, 150 ns (MAX.)
• Low voltage operation (A version: VCC = 3.0 to 5.5 V, B version: VCC = 2.7 to 5.5 V)
• Operating ambient temperature: TA = 0 to 70 °C
• Low VCC data retention: 2.0 V (MIN.)
• Output Enable input for easy application
• Two Chip Enable inputs: /CE1, CE2
Part number
Access time
Operating supply Operating ambient
Supply current
ns (MAX.)
voltage
V
temperature
°C
At operating
mA (MAX.)
At standby
µA (MAX.)
At data retention
µA (MAX.) ^Note1
µPD431000A-xxL
70, 85
4.5 to 5.5
0 to 70
70
100
15
µPD431000A-xxLL
µPD431000A-Axx
µPD431000A-Bxx
70 ^Note2, 100
70 ^Note2, 100, 120, 150
3.0 to 5.5
2.7 to 5.5
20
3
35 ^Note3
13 ^Note5
30 ^Note4
11 ^Note6
Notes 1. TA ≤ 40 °C
2. VCC = 4.5 to 5.5 V
3. 70 mA (VCC > 3.6 V)
4. 70 mA (VCC > 3.3 V)
5. 20 µA (VCC > 3.6 V)
6. 20 µA (VCC > 3.3 V)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. M11657EJBV0DS00 (11th edition)
The mark 5 shows major revised points.
Date Published April 2002 NS CP (K)
Printed in Japan
©
1990, 1993, 1995