UPD23C16340 Datasheet, PDF (1/20 Pages) NEC – 16M-BIT MASK-PROGRAMMABLE ROM 2M-WORD BY 8-BIT (BYTE MODE) / 1M-WORD BY 16-BIT (WORD MODE) PAGE ACCESS MODE

DATA SHEET
MOS INTEGRATED CIRCUIT
µPD23C16340, 23C16380
16M-BIT MASK-PROGRAMMABLE ROM
2M-WORD BY 8-BIT (BYTE MODE) / 1M-WORD BY 16-BIT (WORD MODE)
PAGE ACCESS MODE
Description
The µPD23C16340 and µPD23C16380 are 16,777,216 bits mask-programmable ROM. The word organization is
selectable (BYTE mode : 2,097,152 words by 8 bits, WORD mode : 1,048,576 words by 16 bits).
The active levels of OE (Output Enable Input) can be selected with mask-option.
The µPD23C16340 and µPD23C16380 are packed in 48-pin PLASTIC TSOP(I) and 48-pin TAPE FBGA.
Features
• Pin compatible with NOR Flash Memory
• Word organization
2,097,152 words by 8 bits (BYTE mode)
1,048,576 words by 16 bits (WORD mode)
• Page access mode
BYTE mode : 8 byte random page access (µPD23C16340)
16 byte random page access (µPD23C16380)
WORD mode : 4 word random page access (µPD23C16340)
8 word random page access (µPD23C16380)
• Operating supply voltage : VCC = 2.7 V to 3.6 V
Operating supply
voltage
VCC
3.0 V ± 0.3 V
3.3 V ± 0.3 V
Access time /
Page access time
ns (MAX.)
90 / 25
85 / 25
Power supply current (Active mode)
mA (MAX.)
µPD23C16340
µPD23C16380
40
55
Standby current
(CMOS level input)
µA (MAX.)
30
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. M15709EJ2V0DS00 (2nd edition)
Date Published February 2003 NS CP(K)
Printed in Japan
The mark shows major revised points.
2001