UPD16837 Datasheet, PDF (1/16 Pages) NEC – MONOLITHIC QUAD H BRIDGE DRIVER

DATA SHEET
MOS INTEGRATED CIRCUIT
µPD16837
MONOLITHIC QUAD H BRIDGE DRIVER
DESCRIPTION
The µPD16837 is a monolithic quad H bridge driver employing power MOS FETs in the output stage. The MOS FETs
in the output stage lower the saturation voltage and power consumption as compared with conventional drivers using bipolar
transistors.
In addition, a low-voltage malfunction prevention circuit is also provided that prevents the IC from malfunctioning when
the supply voltage drops. A 30-pin plastic shrink SOP package is adopted to help create compact and slim application sets.
In the output stage H bridge circuits, two low-ON resistance H bridge circuits for driving actuators, and another two
channels for driving sled motors and loading motors are provided, making the product ideal for applications in CD-ROM
and DVD.
FEATURES
• Four H bridge circuits employing power MOS FETs
• High-speed PWM drive: Operating frequency: 120 kHz MAX.
• Low-voltage malfunction prevention circuit: Operating voltage: 2.5 V (TYP.)
• 30-pin shrink SOP (300 mil)
ORDERING INFORMATION
Part Number
µPD16837GS
Package
30-pin plastic SSOP (300 mil)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Parameter
Symbol
Conditions
Control block supply voltage
VDD
Output block supply voltage
VM
Input voltage
H bridge drive current^{Note 1}
Power dissipation^{Note 2}
VIN
IDR (pulse)
PT
PW ≤ 5 ms, Duty ≤ 30 %
Operating temperature range
TA
Peak junction temperature
TCH (MAX)
Storage temperature range
Tstg
Notes 1. When only one channel operates.
2. When mounted on a glass epoxy board (100 mm × 100 mm × 1 mm)
Rating
–0.5 to +7.0
–0.5 to +15
–0.5 to VDD + 0.5
±1.0
1.25
0 to 75
150
–55 to +150
Unit
V
V
V
A/phase
W
°C
°C
°C
The information in this document is subject to change without notice.
Document No. S12764EJ1V0DS00 (1st edition)
Date Published January 1998 N CP(K)
Printed in Japan
©
1998