UPD16835 Datasheet, PDF (1/32 Pages) NEC – MONOLITHIC QUAD H BRIDGE DRIVER CIRCUIT

DATA SHEET
MOS INTEGRATED CIRCUIT
µPD16835
MONOLITHIC QUAD H BRIDGE DRIVER CIRCUIT
The µPD16835 is a monolithic quad H bridge driver IC that employs a CMOS control circuit and a MOS FET output
circuit. Because it uses MOS FETs in its output stage, this driver IC consumes less power than conventional driver
ICs that use bipolar transistors.
Because the µPD16835 controls a motor by inputting serial data, its package has been shrunk and the number
of pins reduced. As a result, the performance of the application set can be improved and the size of the set has been
reduced.
This IC employs a current-controlled 64-step micro step driving method that drives stepper motor with low vibration.
The µPD16835 is housed in a 38-pin shrink SOP to contribute to the miniaturization of the application set.
This IC can simultaneously drive two stepper motors and is ideal for the mechanisms of camcorders.
FEATURES
• Four H bridge circuits employing power MOS FETs
• Current-controlled 64-step micro step driving
• Motor control by serial data (8 bytes × 8 bits) (original oscillation: 4-MHz input)
Data is input with the LSB first.
EVR reference setting voltage: 100 to 250 mV (@VREF = 250 mV) ... 4-bit data input (10-mV step)
Chopping frequency: 32 to 124 kHz ... 5-bit data input (4-kHz step)
Original oscillation division or internal oscillation selectable
Number of pulses in 1 VD: 0 to 252 pulses ... 6 bits + 2-bit data input (4 pulses/step)
Step cycle: 0.25 to 8,191.75 µs ... 15-bit data input (0.25-µs step)
• 3-V power supply. Minimum operating voltage: 2.7 V (MIN.)
• Low current consumption IDD: 3 mA (MAX.), IDD (reset): 100 µA (MAX.), IMO: 1 µA (MAX.)
• 38-pin shrink SOP (300 mil)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Parameter
Symbol
Condition
Rating
Supply voltage
VDD
-0.5 to +6.0
VM
-0.5 to +11.2
Input voltage
VIN
-0.5 to VDD + 0.5
Reference voltage
VREF
500
H bridge drive current^{Note 1}
IM (DC)
DC
±150
Instantaneous H bridge drive current^{Note 1} IM (pulse)
PW ≤ 10 ms, Duty ≤ 5%
±300
Power consumption^{Note 2}
PT
1.0
Peak junction temperature
TCH (MAX)
150
Storage temperature
Tstg
-55 to +150
Notes 1. Permissible current per phase with the IC mounted on a PCB.
2. When the IC is mounted on a glass epoxy PCB (10 cm × 10 cm × 1 mm).
The information in this document is subject to change without notice.
Document No. G11594EJ1V0DS00 (1st edition)
Date Published August 1998 J CP(K)
Printed in Japan
Unit
V
V
V
mV
mA/phase
mA/phase
W
°C
°C
©
1998