UPC8182TB_1 Datasheet, PDF (1/17 Pages) NEC – 3 V, 2.9 GHz SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER FOR MOBILE COMMUNICATIONS

DATA SHEET
BIPOLAR ANALOG INTEGRATED CIRCUIT
µPC8182TB
3 V, 2.9 GHz SILICON MMIC
MEDIUM OUTPUT POWER AMPLIFIER
FOR MOBILE COMMUNICATIONS
DESCRIPTION
The µPC8182TB is a silicon monolithic integrated circuit designed as amplifier for mobile communications. This
IC operates at 3 V. The medium output power is suitable for RF-TX of mobile communications system.
This IC is manufactured using our 30 GHz fmax UHS0 (Ultra High Speed Process) silicon bipolar process. This
process uses direct silicon nitride passivation film and gold electrodes. These materials can protect the chip surface
from pollution and prevent corrosion/migration. Thus, this IC has excellent performance, uniformity and reliability.
FEATURES
• Supply voltage
: VCC = 2.7 to 3.3 V
• Circuit current
: ICC = 30 mA TYP. @ VCC = 3.0 V
• Medium output power
: PO(1dB) = +9.5 dBm TYP. @ f = 0.9 GHz
PO(1dB) = +9.0 dBm TYP. @ f = 1.9 GHz
PO(1dB) = +8.0 dBm TYP. @ f = 2.4 GHz
• Power gain
: GP = 21.5 dB TYP. @ f = 0.9 GHz
GP = 20.5 dB TYP. @ f = 1.9 GHz
GP = 20.5 dB TYP. @ f = 2.4 GHz
• Upper limit operating frequency : fu = 2.9 GHz TYP. @ 3 dB bandwidth
• High-density surface mounting : 6-pin super minimold package (2.0 × 1.25 × 0.9 mm)
APPLICAION
• Buffer amplifiers on 1.9 to 2.4 GHz mobile communications system
ORDERING INFORMATION
Part Number
Package
µ PC8182TB-E3 6-pin super minimold
Marking
C3F
Supplying Form
• Embossed tape 8 mm wide
• Pin 1, 2, 3 face the perforation side of the tape
• Qty 3 kpcs/reel
Remark To order evaluation samples, contact your nearby sales office.
Part number for sample order: µPC8182TB
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PU10206EJ01V0DS (1st edition)
(Previous No. P14543EJ2V0DS00)
Date Published December 2002 CP(K)
Printed in Japan
The mark • shows major revised points.
© NEC Compound Semiconductor Devices 1999, 2002