UPC8181TB Datasheet, PDF (1/16 Pages) California Eastern Labs – 3 V, SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER FOR MOBILE COMMUNICATIONS

DATA SHEET
BIPOLAR ANALOG INTEGRATED CIRCUIT
µPC8181TB
3 V, SILICON MMIC
MEDIUM OUTPUT POWER AMPLIFIER
FOR MOBILE COMMUNICATIONS
DESCRIPTION
The µPC8181TB is a silicon monolithic integrated circuit designed as amplifier for mobile communications. This
IC operates at 3 V. The medium output power is suitable for RF-TX of mobile communications system.
This IC is manufactured using NEC’s 30 GHz fmax UHS0 (Ultra High Speed Process) silicon bipolar process. This
process uses direct silicon nitride passivation film and gold electrodes. These materials can protect the chip surface
from pollution and prevent corrosion/migration. Thus, this IC has excellent performance, uniformity and reliability.
FEATURES
• Supply voltage
• Circuit current
• Medium output power
• Power gain
• Upper limit operating frequency
• High-density surface mounting
: VCC = 2.7 to 3.3 V
: ICC = 23.0 mA TYP. @ VCC = 3.0 V
: PO(1dB) = +8.0 dBm TYP. @ f = 0.9 GHz
PO(1dB) = +7.0 dBm TYP. @ f = 1.9 GHz
PO(1dB) = +7.0 dBm TYP. @ f = 2.4 GHz
: GP = 19.0 dB TYP. @ f = 0.9 GHz
GP = 21.0 dB TYP. @ f = 1.9 GHz
GP = 22.0 dB TYP. @ f = 2.4 GHz
: fu = 4.0 GHz TYP. @ 3 dB bandwidth (Standard value)
: 6-pin super minimold package (2.0 × 1.25 × 0.9 mm)
APPLICATION
• Buffer amplifiers on 1.9 to 2.4 GHz mobile communications system.
ORDERING INFORMATION
Part Number
µPC8181TB-E3
Package
6-pin super minimold
Marking
C3E
Supplying Form
• Embossed tape 8 mm wide
• 1, 2, 3 pins face the perforation side of the tape
• Qty 3 kpcs/reel
Remark To order evaluation samples, please contact your local NEC sales office.
Part number for sample order: µPC8181TB
Caution Electro-static sensitive devices
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P15114EJ2V0DS00 (2nd edition)
Date Published July 2001 N CP(K)
The mark shows major revised points.
Printed in Japan
©
2000, 2001