UPC8128TB Datasheet, PDF (1/52 Pages) NEC – SILICON MMIC LOW CURRENT AMPLIFIERS FOR CELLULAR/CORDLESS TELEPHONES

DATA SHEET
BIPOLAR ANALOG INTEGRATED CIRCUITS
µPC8128TB, µPC8151TB, µPC8152TB
SILICON MMIC LOW CURRENT AMPLIFIERS
FOR CELLULAR/CORDLESS TELEPHONES
DESCRIPTION
The µPC8128TB, µPC8151TB and µPC8152TB are silicon monolithic integrated circuits designed as buffer
amplifiers for cellular or cordless telephones. These amplifiers can realize low current consumption with external
chip inductor (eg 1005 size) which can not be realized on internal 50 Ω wideband matched IC. These low current
amplifiers operate on 3.0 V.
These ICs are manufactured using NEC’s 20 GHz fT NESAT™ III silicon bipolar process. This process uses
silicon nitride passivation film and gold electrodes. These materials can protect chip surface from external pollution
and prevent corrosion/migration. Thus, these ICs have excellent performance, uniformity and reliability.
FEATURES
• Supply voltage
: VCC = 2.4 to 3.3 V
• Low current consumption
: µPC8128TB
; ICC = 2.8 mA TYP. @VCC = 3.0 V
µPC8151TB
; ICC = 4.2 mA TYP. @VCC = 3.0 V
µPC8152TB
; ICC = 5.6 mA TYP. @VCC = 3.0 V
• High efficiency
: µPC8128TB
; PO(1 dB) = −4.0 dBm TYP. @f = 1 GHz
µPC8151TB
; PO(1 dB) = +2.5 dBm TYP. @f = 1 GHz
µPC8152TB
; PO(1 dB) = −4.5 dBm TYP. @f = 1 GHz
• Power gain
: µPC8128TB, 8151TB ; GP = 12.5 dB TYP. @f = 1 GHz
µPC8152TB
; GP = 23 dB TYP. @f = 1 GHz
• Excellent isolation
: µPC8128TB
; ISL = 39 dB TYP. @f = 1 GHz
: µPC8151TB
; ISL = 38 dB TYP. @f = 1 GHz
: µPC8152TB
; ISL = 40 dB TYP. @f = 1 GHz
• Operating frequency
: 100 to 1 900 MHz (Output port LC matching)
• High-density surface mounting : 6-pin super minimold package (2.0 × 1.25 × 0.9 mm)
• Light weight
: 7 mg (Standard value)
APPLICATION
• Buffer Amplifiers on 800 to 1 900 MHz cellular or cordless telephones
Caution Electro-static sensitive devices
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P12549EJ3V0DS00 (3rd edition)
Date Published February 2001 N CP(K)
The mark shows major revised points.
©
Printed in Japan
1997, 2001