UPC8128TA Datasheet, PDF (1/16 Pages) NEC – SILICON MMIC LOW CURRENT AMPLIFIERS FOR CELLULAR/CORDLESS TELEPHONES

PRELIMINARY DATA SHEET
BIPOLAR ANALOG INTEGRATED CIRCUITS
PPC8128TA, PPC8151TA, PPC8152TA
SILICON MMIC LOW CURRENT AMPLIFIERS
FOR CELLULAR/CORDLESS TELEPHONES
DESCRIPTION
The PPC8128TA, PPC8151TA and PPC8152TA are silicon monolithic integrated circuits designed as buffer
amplifiers for cellular / cordless telephones. These amplifiers can realize low current consumption with external chip
inductor (example: 1005 size) which can not be realized on internal 50 : wideband matched IC. These low current
amplifiers operate on 3.0 V.
These ICs are manufactured using NEC’s 20 GHz fT NESAT™ III silicon bipolar process. This process uses
silicon nitride passivation film and gold electrodes. These materials can protect chip surface from external pollution
and prevent corrosion/migration. Thus, these ICs have excellent performance, uniformity and reliability.
FEATURES
• Low current consumption
• Supply voltage
• High efficiency
• Power gain variation
• Operating frequency
• Excellent isolation
: PPC8128TA
; ICC = 2.8 mA TYP. @ VCC = 3.0 V
PPC8151TA
; ICC = 4.2 mA TYP. @ VCC = 3.0 V
PPC8152TA
; ICC = 5.6 mA TYP. @ VCC = 3.0 V
: VCC = 2.4 to 3.3 V
: PPC8128TA
; PO (1 dB) = ð4.0 dBm TYP. @ f = 1 GHz
PPC8151TA
; PO (1 dB) = +2.5 dBm TYP. @ f = 1 GHz
PPC8152TA
; PO (1 dB) = ð4.5 dBm TYP. @ f = 1 GHz
: PPC8128TA, 8151TA ; GP = 12.5 dB TYP. @ f = 1 GHz
PPC8152TA
; GP = 23.0 dB TYP. @ f = 1 GHz
: 100 to 1 900 MHz (Output port LC matching)
: PPC8128TA
; ISL = 39 dB TYP. @ f = 1 GHz
: PPC8151TA
; ISL = 38 dB TYP. @ f = 1 GHz
: PPC8152TA
; ISL = 40 dB TYP. @ f = 1 GHz
APPLICATION
• Buffer Amplifiers on 800 to 1 900 MHz cellular / cordless telephones
Caution Electro-static sensitive devices
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P14637EJ1V0DS00 (1st edition)
Date Published April 2000 N CP(K)
Printed in Japan
©
2000