UPC8119T_02 Datasheet, PDF (1/3 Pages) NEC – 1.9 GHz AGC AMPLIFIER

1.9 GHz AGC AMPLIFIER UPC8119T
FEATURES
• FREQUENCY RESPONSE:
800 MHz to 1.9 GHz
• SUPPLY VOLTAGE RANGE:
2.7~3.3 V
• VAGC: 0.6~2.3 V
• SUPER SMALL SURFACE MOUNT PACKAGE
• TAPE AND REEL PACKAGING OPTION AVAILABLE
• GAIN CONTROL RANGE UP TO 40 dB
DESCRIPTION
The UPC8119T is a Silicon Monolithic Microwave Integrated
Circuit which is manufactured using the NESAT III process.
The NESAT III process produces transistors with fT approach-
ing 20 GHz. This device is suitable as an Automatic Gain
Control Amplifier stage in cellular radios, GPS receivers, PCN,
and test/measurement equipment.
NEC's stringent quality assurance and test procedures assure
the highest reliability and performance.
UPC8119T
GAIN vs. AGC VOLTAGE
20
10
0
-10
-20
-30
0
1
2
3
VAGC Voltage, VAGC (V)
ELECTRICAL CHARACTERISTICS (TA = 25°C, VCC = 3.0 V, ZS = ZL = 50 Ω)
PART NUMBER
PACKAGE OUTLINE
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS
ICC
GCR
GPMAX
P1dB
NF
RLIN
ISOL
Circuit Current (no signal)
Gain Control²f = 950 MHz, PIN = -30 dBm
f = 1440 MHz, PIN = -30 dBm
f = 1900 MHz, PIN = -30 dBm
Maximum Power Gain, f = 950 MHz, PIN = -30 dBm
f = 1440 MHz, PIN = -30 dBm
f = 1900 MHz, PIN = -30 dBm
Output Power at 1 dB compression, f = 950 MHz, GPMAX
f = 1440 MHz, GPMAX
f = 1900 MHz, GPMAX
Noise Figure
f = 950 MHz, GPMAX
f = 1440 MHz, GPMAX
f = 1900 MHz, GPMAX
Input Return Loss f = 950 MHz, GPMAX
f = 1440 MHz,GPMAX
Isolation
f = 950 MHz, GPMAX
f = 1440 MHz, GPMAX
mA
dB
dB
dB
dB
dB
dB
dBm
dBm
dBm
dB
dB
dB
dB
dB
dB
dB
UPC8119T
T06
MIN
TYP
7.5
11
40
50
35
45
22
10
12.5
10
13
12.5
0
+3
+1
+4
+3
8.5
7.5
7.2
3
6
3
6
27
32
31
36
MAX
15
15
16
11.5
10.5
California Eastern Laboratories