UPC8105GR_97 Datasheet, PDF (1/5 Pages) NEC – SILICON MMIC QUADRATURE MODULATOR

SILICON MMIC _UPC8105GR
QUADRATURE MODULATOR
FEATURES
• WIDE SUPPLY VOLTAGE RANGE: 2.7 ~ 5.5 V
• BROADBAND OPERATION:
MODOUT = 100 - 400 MHz, I/Q = DC to 10 MHz
• INTERNAL 90° PHASE SHIFTER
• POWER SAVE FUNCTION
• LOW POWER CONSUMPTION: 16 mA Typ. @ 3 V
• SMALL SSOP 16 PACKAGE
• TAPE AND REEL PACKAGING AVAILABLE
FUNCTIONAL BLOCK DIAGRAM
LO
I
I
0˚
φ
90˚
Q
Q
DESCRIPTION
The UPC8105GR Silicon MMIC I/Q Modulator is manufac-
tured using the NESAT III MMIC process. The NESAT III
process produces transistors with fT approaching 20 GHz.
The device was designed for use in Digital Mobile Communi-
cations circuits such as 900 MHz Digital Cordless and Cellular
Phones, WLAN and PCN/PCS Handset Transmitters.
NEC's stringent quality assurance and test procedures en-
sure the highest reliability and performance.
ELECTRICAL CHARACTERISTICS (TA = 25°C, VCC = 3.0 V, VPS ≥ 1.8 V)
SYMBOLS
ICC
PMOD
LOLEAK
ImR
IM3I/Q
RLIN
ZI/Q
TPS(RISE)
TPS (FALL)
PART NUMBER
PACKAGE OUTLINE
PARAMETERS AND CONDITIONS
Total Circuit Current (no signal)
VPS ≥ 1.8 V
VPS ≤ 1.0 V
Output Power - Modulator
Local Oscillator Leakage
Image Rejection
VI/Q = 1.5 V (DC)
I/Q 3rd Order Intermodulation Distortion
+ 500 mVp-p (AC)
I/Q LO Input Return Loss
Input Impedance I and Q Port
Power Save Rise Time VPS ≤ 1.0 V to VPS ≥ 1.8V
Power Save Fall Time VPS ≥1.8 V to VPS ≤1.0 V
UNITS
mA
µA
dBm
dBc
dBc
dBc
dB
kΩ
µS
µS
UPC8105GR
S16 (SSOP 16)
MIN
TYP
MAX
10
16
21
0.1
5
-21
-16.5
-12
-40
-30
-40
-30
-50
20
20
2
5
2
5
California Eastern Laboratories